Chapter 8 ON MODELING MOS - DEVICES
نویسندگان
چکیده
The topic of modern MOS-Transistor modeling is reviewed. Models for surface scattering and impact ionization, physical parameters which are of particular relevance for MOS-Transistor simulation programs, are explained. Guidelines to a mathematical analysis of the fundamental equations, which allow the judgement of numerical methods for their applicability, are presented. Examples of applications of simulation programs on the analysis of problems which are important at present are sketched~
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